PN EPI Tech specializes in manufacturing high-power infrared LEDs using the Liquid Phase Epitaxy (LPE) growth method on GaAlAs wafers.
Product Highlights:
Material: Gallium Aluminum Arsenide (GaAlAs)
Wavelength Range: 850 nm – 930 nm
Available Wavelengths:
850, 860, 870, 880, 890, 900, 910, 920, 930 nm
LED Structure:
- N-side up (Cathode)
- P-side down (Anode)
Chip Size: Customizable based on customer requirements
Pricing
Custom IR LED Chip Pricing
Pricing is based on wavelength, output power, and order volume.
Starting at $0.035 per chip
Volume discounts available for orders over 1 million units.
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Our Growth Process
Liquid Phase Epitaxy LPE is a high-temperature solution growth technique, in which a thin layer of the required material is deposited onto a suitable substrate.
Homoepitaxy is defined as growth of a layer of the same composition as the substrate, whereas heteroepitaxy is the growth of a layer of markedly different composition.
A suitable substrate material would have the same crystal structure as the layer, have as close a match in lattice parameter as possible, and be chemically compatible with the solution and the layer. LEP was established for III–V compound semiconductor lasers, LEDs, photodiodes, and solar cells.